![]() ![]() The gate terminal is located between the source and drain terminals and is the area used for biasing of the device.Sometimes it is termed as a four-pin device when the body is also considered as its terminal. The IRF740 contains three terminals named source, drain, and gate.This device is mainly used for fast switching applications and comes with ultra-low on-resistance of 0.55 Ohms which is the resistance between drain and source terminals.This is the power device dissipates during the working of this component. ![]() The IRF740 is an N-channel MOSFET that comes with 125W power dissipation.I suggest you read this post till the end as I’ll describe the complete Introduction to IRF740 covering datasheet, pinout, features, and applications. The maximum drain current of this device is 10A and drain-source capacitance is 1450pF. It comes with a power dissipation of around 125W and can support load up to 400V. The IRF740 is an N-channel power MOSFET used for extremely fast switching applications. In this post today, I’ll detail the Introduction to IRF740. ![]()
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